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6.774 Physics of Microfabrication: Front End Processing, Fall 2004

Image of a silicon wafer.

A silicon wafer that may be exposed to deposition and etching processes. (Image courtesy of NASA Space Research.)

Highlights of this Course

This course features a full set of audio lectures in the lecture notes section. In addition, a number of assignments are available.

Course Description

This course is offered to graduates and focuses on understanding the fundamental principles of the "front-end" processes used in the fabrication of devices for silicon integrated circuits. This includes advanced physical models and practical aspects of major processes, such as oxidation, diffusion, ion implantation, and epitaxy. Other topics covered include: high performance MOS and bipolar devices including ultra-thin gate oxides, implant-damage enhanced diffusion, advanced metrology, and new materials such as Silicon Germanium (SiGe).

Technical Requirements

RealOne™ Player software is required to run the .rm files found on this course site.

 

Staff

Instructor:
Prof. Judy Hoyt

Contributor:
Prof. L. Rafael Reif

Course Meeting Times

Lectures:
Two sessions / week
1.5 hours / session

Level

Graduate

Additional Features

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